دیتاشیت BUK9E3R2-40E,127
مشخصات دیتاشیت
| نام دیتاشیت |
BUK9E3R2-40E
|
| حجم فایل |
340.226
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
14
|
مشخصات
-
Manufacturer:
NXP USA Inc.
-
Series:
TrenchMOS™
-
Packaging:
Tube
-
Part Status:
Obsolete
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
40V
-
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
-
Rds On (Max) @ Id, Vgs:
2.8mOhm @ 25A, 10V
-
Vgs(th) (Max) @ Id:
2.1V @ 1mA
-
Gate Charge (Qg) (Max) @ Vgs:
69.5nC @ 5V
-
Vgs (Max):
±10V
-
Input Capacitance (Ciss) (Max) @ Vds:
9150pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
234W (Tc)
-
Operating Temperature:
-55°C ~ 175°C (TJ)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
I2PAK
-
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
-
Base Part Number:
BUK9
-
detail:
N-Channel 40V 100A (Tc) 234W (Tc) Through Hole I2PAK
